Phosphor, method for preparing phosphor, optoelectronic component, and method for producing optoelectronic component

ABSTRACT

The present invention relates to a phosphor, a method for preparing the phosphor, an optoelectronic component, and a method for producing the optoelectronic component. The phosphor has the following general formula: La3(1−x)Ga1−yGe5(1−z)O16: 3xA3+, yCr3+, 5zB4+, where x, y, and z do not equal to 0 simultaneously; A represents at least one of Gd and Yb; B represents at least one of Sn, Nb, and Ta. For the phosphor, its emission spectrum is within a red visible light region and a near-infrared region when excited by blue visible light, purple visible light or ultraviolet light; and it has a wide reflection spectrum and a high radiant flux. Therefore, it can be used in optoelectronic components such as LEDs to meet requirements of current medical testing, food composition analysis, security cameras, iris/facial recognition, virtual reality, gaming notebook and light detection and ranging applications.

TECHNICAL FIELD

The present application relates to a phosphor, a method for preparingthe phosphor, an optoelectronic component, and a method for producingthe optoelectronic component, in particular, it relates to a phosphorhaving a high radiant flux and having a wide emission spectralwavelength in a red visible light and near-infrared regions, a methodfor preparing the phosphor, an optoelectronic component provided withthe phosphor, and a process for producing the optoelectronic component.

BACKGROUND

Visible light is a part of the electromagnetic spectrum that can beperceived by human eyes. Infrared light is an electromagnetic wave(light) having a longer wavelength than the visible light. Studies haveshown that infrared light can “penetrate” into human skin and isabsorbable by the epidermis, dermis and subcutaneous tissue. At the sametime, some spectrums absorbable by human organs falls within a visiblerange of electromagnetic spectrum, however, the reflected spectrum is abroadband reflection spectrum, which is within ranges of near-infraredlight and red visible light. For instance, in a human brain, protein andoxyhemoglobin have an absorption spectrum and a reflection spectrum of450 nm-600 nm and 700 nm-900 nm, respectively.

Therefore, organs can be detected according to the light spectrumabsorbed or reflected by the different organs of the human body, forinstance, for analyzing haemoglobin content, oxygen saturation,scattering lipid content, etc., and an extension has been made to thefield of food or polymer component detection. In recent years, anoptoelectronic component capable of generating a wide infrared emissionspectrum has been widely used in security camera, iris/facialrecognition, virtual reality, gaming notebook and light detection andranging (LIDAR) technologies.

However, the infrared light emitted by optoelectronic components on thecurrent market has disadvantages such as narrow emission spectrum, lowradiant flux and the like, which cannot meet application requirements ofthe above medical component detection, intelligent technology and thelike.

A luminescent material is a material that releases energy in the form ofemitted light due to excitation from excitation light source. Currently,the luminescent material that is most studied and well-developed ismainly phosphor, especially phosphor excited by the blue chip forgenerating white LEDs, and the research has a focus on how to obtainemitted light (or called a secondary radiation) of a narrower wavelengthrange. The principle of white LED applies to the infrared phosphorsconverted LED also and hence it possesses advantages like low powerconsumption, compact, high lifetime and cheaper as compared totraditional light sources. In recent research, it is also reported thatthe use of phosphor is expanded to the security of anti-counterfeit andmarker identification. For instance, it is reported that a study is madeon the possibility of La₃Ga₅GeO₁₄: Cr³⁺ for the applications ofpersistent luminescence, which mainly utilizing the phosphorescenceproperty of the phosphors, continuous emission of light for a long timeafter excitation is ceased off. However, there is no report about thephosphor which can produce wide red visible light and near-infraredspectrums when excited by blue visible light, purple visible light orultraviolet light and has a high radiant flux, let alone its applicationin the optoelectronic component.

SUMMARY

In view of the above drawbacks in the prior art, the present applicationprovides a phosphor capable of emitting near-infrared light and redvisible light when excited by blue visible light, purple visible lightor ultraviolet light and having a wide emission spectrum and a highradiant flux.

The present application further provides a method for preparing theabove phosphor, the phosphor prepared by the method can emitnear-infrared light and red visible light when excited by blue visiblelight, purple visible light or ultraviolet light, and has a wideemission spectrum and a high radiant flux.

The present application provides an optoelectronic component, which canuse a conversion unit provided with the above phosphor to convert bluevisible light, purple visible light or ultraviolet light emitted from asemiconductor chip into the near-infrared light and red visible light.The optoelectronic component has a wide emission spectrum and a highradiant flux in the ranges of near-infrared light and red visible light.

The present application further provides a method for producing anoptoelectronic component, where the method has a characteristic ofsimple process and can produce an optoelectronic component that convertsblue visible light, purple visible light or ultraviolet light into thenear-infrared light and red visible light.

To achieve the above purpose, the present application provides aphosphor having the following general formula:La_(3(1−x))Ga_(1−y)Ge_(5(1−z))O₁₆: 3xA³⁺, yCr³⁺, 5zB⁴⁺,  (GeneralFormula I)where x, y, and z do not equal to 0 simultaneously; A represents atleast one of Gd and Yb; and B represents at least one of Sn, Nb, and Ta.

The phosphor is composed of a host material acting as a matrix and adopant (or referred to as a luminescent center) acting as an activator,sometimes a sensitizer needs to be incorporated. The activator and thesensitizer replacing the ions in the original site of the matrixlattice.

Specifically, in the phosphor represented by the General Formula I, 0

x

0.5, 0

y

0.5, 0

z

0.5, and x, y, and z do not equal to 0 simultaneously. In a specificimplementation of the present application, usually 0

3x

0.3, 0

y

0.2, 0

5z

0.2, and x, y and z do not equal to 0 simultaneously.

In a specific implementation of the present application, the phosphorhas the following general formula:La₃Ga_(1−y)Ge₅O₁₆: yCr³⁺,  (General Formula II)

where 0<y

0.2.

In the phosphor represented by the General Formula II,La₃Ga_(1−y)Ge₅O₁₆is a host material of the matrix, and Cr³⁺ is anactivator. Adjusting the doping concentration of Cr³⁺, the emissionspectrum of the phosphor is maintained in a near-infrared region and ared visible region, but the radiant flux changes accordingly; therefore,the doping concentration of Cr³⁺ is generally controlled to 0.5%-20%, itmeans, 0.005

y

0.2. In a specific implementation of the present application, the dopingconcentration of Cr³⁺ is usually controlled to 3.0%-11%, it means, 0.035

y

0.11, so that the phosphor has a high radiant flux.

In another implementation of the present application, the phosphor hasthe following general formula:La_(3(1−x))Ga_(1−y)Ge₅O₁₆: 3xA³⁺, yCr³⁺,  (General Formula III)where 0

3x

0.3, 0

y≤0.2, and x and y do not equal to 0 simultaneously, for instance, 0<3x

0.3 and 0<y

0.2; A represents at least one of Gd and Yb

In the phosphor represented by the General Formula III, the dopingconcentration of Cr³⁺ is fixed. For instance, the doping concentrationof Cr³⁺ is controlled to less than 10%, that is, 0<y

0.1; changing the doping concentration of A³⁺, the emission spectrum ofthe phosphor is maintained at the near-infrared region and the redvisible region, but the radiant flux changes accordingly, therefore, thedoping concentration of A³⁺ is generally controlled to 0.1%-10%, thatis, 0.003

3x

0.3. In a specific implementation of the present application, the dopingconcentration of A³⁺ is generally controlled to 0.5%-5%, that is, 0.015

3x

0.15, so that the phosphor has a high radiant flux.

In still another implementation of the present application, in thephosphor having the General Formula I(La_(3(1−x))Ga_(1−y)Ge_(5(1−z))O₁₆: 3xA³⁺, yCr³⁺, 5zB⁴⁺), 0<3x

0.3, 0<y

0.2, 0<5z

0.2; A represents at least one of Gd and Yb; and B represents at leastone of Sn, Nb and Ta.

In the phosphor represented by the General Formula I, the dopingconcentrations of Cr³⁺ and A³⁺ are fixed. For instance, it is controlledthat 0<3x

0.1, 0y

0.1; changing the doping concentration of B⁴⁺, the emission spectrum ofthe phosphor is maintained in the near-infrared region and the redvisible region, but the radiant flux changes accordingly, therefore, thedoping concentration of B⁴⁺ is generally controlled to 0.5%-4%, that is,0.025≤5z

0.2. In a specific implementation process of the present application,the doping concentration of B⁴⁺ is generally controlled to 0.5%-3%, thatis, 0.025

5z

0.15, so that the phosphor has a high radiant flux.

Specifically, the above phosphor satisfies at least one of the followingthree conditions based on the composition of La₃GaGe₅O₁₆:

Cr³⁺ replaces part of Ga³⁺;

A³⁺ replaces part of La³⁺;

B⁴⁺ replaces part of Ge⁴⁺.

For instance, for the phosphor represented by the General Formula II,the doped Cr³⁺ replaces part of Ga³⁺ in the matrix La₃GaGe₅O₁₆, or theincorporation of Cr³⁺ to replace Ga³⁺ on the original site of the matrixlattice.

When excited by blue visible light, purple visible light or ultravioletlight acting as a primary radiation, the above phosphor emits asecondary radiation within the ranges of the red visible light spectrumand the near-infrared spectrum and has a wide emission spectrum. Inparticular, the above phosphor has an emission spectrum of 650 -1500 nm,especially 650-1050 nm, when excited by excitation light having awavelength of 400-500 nm, especially a wavelength of 450 nm or 460 nm.

Moreover, the phosphor has a high radiant flux within the range of theemission spectrum described above, and radiant flux of the light emittedby the phosphor is 4-70 mW.

In still another implementation of the present application, a phosphorhaving the following general formula is provided:La₃Ga_(5(1−x))Ge_(1−y)O₁₄: 5xCr³⁺, ySn⁴⁺,  (General Formula IV)where 0<x

0.1, 0

y≤0.9.

In the phosphor represented by the General Formula IV,La₃Ga_(5(1−x))Ge_(1−y)O₁₄ is used as a host material of the matrix, Cr³⁺is used as an activator (or called a luminescent center), and Sn⁴⁺ isused as a sensitizer.

When excited by blue visible light, purple visible light or ultravioletlight acting as a primary radiation, the phosphor represented by theGeneral Formula IV emits a secondary radiation within the ranges of thered visible light spectrum and the near-infrared spectrum and has a wideemission spectrum. Specifically, when excited by excitation light havinga wavelength of 400-500 nm, especially a wavelength of 450 nm or 460 nm,the phosphor represented by the General Formula IV has an emissionspectrum of 650-1500 nm, especially 650-1050 nm.

Specifically, based on the La₃Ga₅GeO₁₄ composition, in the phosphorrepresented by the General Formula IV, Cr³⁺ and Sn⁴⁺ partially replacethe part of metal elements in the host material.

All of the above phosphors can be prepared by a conventionalhigh-temperature solid-state reaction method in the art. Specifically,raw materials are stoichiometrically weighted according to the abovegeneral formula and mixed evenly in an agate mortar and then sintered ata certain temperature in the furnace, for instance, at a temperature of1200-1500° C. to obtain a target product.

The present application further provides a method for preparing theabove-described phosphor, including steps of preparing and mixing rawmaterials for providing elements in the general formula according to thegeneral formula of the luminescent material and then sintering at atemperature of 1200-1500° C. to obtain a target phosphor.

Specifically, the raw materials are accurately weighed according to adesigned formula, placed in an agate mortar to grind for evenly mixing,and then the mixture is sintered in an air atmosphere, generally, thetemperature is controlled to 1250-1350° C. to sinter for about 5-6hours, then the phosphor can be obtained.

The raw materials for preparing the phosphor described above may bespecifically selected from oxide or carbonate containing the elements inthe determined general formula or other compounds capable of providingcorresponding metal elements. For instance, if the phosphor to beprepared has a molecular formula of La₃Ga_(0.09)Ge₅O₁₆:0.01Cr³⁺, then aweighted calculation may be performed for the desired raw materialsLa₂O₃, Ga₂O₃, Cr₂O₃ and GeO₂ according to a stoichiometric ratio in themolecular formula, and the weights of the raw materials are finallydetermined.

The present application provides an optoelectronic component including:

a semiconductor chip for emitting excitation light during operation ofthe optoelectronic component; and

a conversion unit provided with the above-described phosphor forconverting the excitation light into emitted light.

Specifically, the excitation light acting as the primary radiation has awavelength of 400-500 nm, especially a wavelength of 450 nm or 460 nm;the emitted light acting as the secondary radiation has a wavelength of600-1500 nm, especially 600-1100 nm, and more particularly 650-1050 nm.

The above semiconductor chip is not particularly limited in the presentapplication, as long as it can emit the primary radiation of the abovewavelength during operation, such as a blue, purple or ultraviolet LEDchip or laser chip which has been commercialized, especially a blue LEDchip of 400-500 nm, more particularly a blue LED chip of 450 nm or ablue LED chip of 460 nm. In a specific implementation of the presentapplication, a blue LED chip having an emission wavelength of 450-452.5nm is used.

The above-described optoelectronic component is not particularly limitedin the present application with regard to its specific form, as long asit can achieve the above functions. For instance, it may present in aform of an LED device including at least a blue, purple or ultravioletLED chip for generating a primary radiation and a conversion unit forconverting the primary radiation into a secondary radiation. Theconversion unit is disposed in an optical path of the primary radiationand contains or is provided with the above-described phosphor.

The present application does not specifically limit how to obtain theconversion unit according to the above phosphor. It can be a commonmethod in the field of optoelectronic components, especially LEDdevices, as long as a cooperation with the LED chip may be achieved torealize the conversion from the primary radiation to the secondaryradiation. For instance, the phosphor is dispersed in a transparentepoxy resin in a certain ratio to obtain a conversion unit dispersedoutside the LED chip.

The present application further provides a method for producing anoptoelectronic component, including steps of:

producing a conversion unit on which the above phosphor is provided;

mounting the produced conversion unit on a semiconductor chip, where thesemiconductor chip is used to generate excitation light during operationof the optoelectronic component.

The closer the phosphor is to the semiconductor chip, the higher or thelower its concentration is.

The closer the phosphor is to the semiconductor chip, the higher or thelower its concentration appears in a gradient manner.

The phosphor may be in direct or indirect contact with the semiconductorchip.

The phosphor may be a quantum dot phosphor.

Particles of the phosphor may be covered with at least one layer ofoxide at its periphery, such as silicon dioxide.

Further, the method for producing the optoelectronic component describedabove may further include step for preparing the above-describedphosphor: preparing and mixing the raw materials for providing elementsin the general formula according to the general formula of the phosphor,and then sintering at a temperature of 1200-1500° C., for instance,sintering for about 5-6 hours at a temperature of about 1250-1350° C. toobtain the desired phosphor.

For the phosphor provided in the present application, its emissionspectrum is within the red visible light and near-infrared light whenexcited by blue visible light, purple visible light or ultravioletlight; and it has a wide emission spectrum and a high radiant flux.Therefore, it can be used in optoelectronic components such as LEDs andlaser devices to meet requirements of current medical testing, foodcomposition analysis, security camera, iris/facial recognition, virtualreality, gaming notebook and light detection and ranging applications.

The preparing method of the above phosphor provided in the presentapplication has a characteristic of the simple process and is convenientfor practical generalization and large-scale application.

The optoelectronic component provided in the present application can usea conversion unit provided with the above-described phosphor to convertblue, purple or ultraviolet light emitted from the semiconductor chipinto near-infrared light and red visible light in order , and it has awide emission spectrum and a high radiation flux in the ranges ofnear-infrared light and red visible light, so as to meet requirements ofcurrent medical testing, food composition analysis, security cameras,iris/facial recognition, virtual reality, gaming notebook and lightdetection and ranging applications.

Moreover, the optoelectronic component has a characteristic of thesimple structure, can be improved and obtained on the basis of theexisting optoelectronic component, and has an advantage of lowmanufacturing cost.

The method for producing the optoelectronic component provided in thepresent application has a characteristic of simple process and can beprocessed on the basis of the existing device component, furtherfacilitating the generalization of the above-described optoelectroniccomponent.

BRIEF DESCRIPTION OF DRAWING(S)

FIG. 1 is the X-ray diffraction spectrum of the phosphorLa₃Ga_(0.99)Ge₅O₁₆: 0.01Cr³⁺ according to Example 1;

FIG. 2 is the X-ray diffraction spectrum of the phosphorLa₃Ga_(0.93)Ge₅O₁₆: 0.07Cr³⁺ according to Example 1;

FIG. 3 is the photoluminescence emission spectrum (the excitation lighthas a wavelength of 460 nm) of the phosphor La₃Ga_(0.99)Ge₅O₁₆: 0.01Cr³⁺according to Example 1;

FIG. 4 is the photoluminescence emission spectrum (the excitation lighthas a wavelength of 450 nm) of the phosphor La₃Ga_(0.93)Ge₅O₁₆: 0.07Cr³⁺according to Example 1;

FIG. 5 is the X-ray diffraction spectrum of the phosphorLa_(2.97)Ga_(0.99)Ge₅O₁₆: 0.03Gd³⁺, 0.01Cr³⁺ according to Example 2;

FIG. 6 is the photoluminescence emission spectrum (the excitation lighthas a wavelength of 460 nm) of the phosphor La_(2.97)Ga_(0.99)Ge₅O₁₆:0.03Gd³⁺, 0.01Cr³⁺ according to Example 2;

FIG. 7 is the X-ray diffraction spectrum of the phosphorLa_(2.97)Ga_(0.99)Ge₅O₁₆: 0.03Yb³⁺, 0.01Cr³⁺ according to Example 3;

FIG. 8 is the photoluminescence emission spectrum (the excitation lighthas a wavelength of 460 nm) of the phosphor La_(2.97)Ga_(0.99)Ge₅O₁₆:0.03Yb³⁺, 0.01Cr³⁺ according to Example 3;

FIG. 9 is the X-ray diffraction spectrum of the phosphors according toExamples 4-5;

FIG. 10 is the photoluminescence emission spectrum (the excitation lighthas a wavelength of 450 nm) of the phosphor La_(2.97)Ga_(0.93)Ge₅O₁₆:0.03Gd³⁺, 0.07Cr³⁺ according to Example 4;

FIG. 11 is the photoluminescence emission spectrum (the excitation lighthas a wavelength of 450 nm) of the phosphorLa_(2.97)Ga_(0.93)Ge_(4.95)O₁₆: 0.03Gd^(3±), 0.07Cr³⁺, 0.05Sn⁴⁺according to Example 5;

FIG. 12 is a schematic structural diagram of the optoelectroniccomponent according to Example 6;

FIG. 13 is the photoluminescence emission spectrum (the excitation lighthas a wavelength of 450 nm) of the phosphor having different dopingconcentrations of Cr³⁺ according to Experimental Example 1;

FIG. 14 is a graph showing the relationship between the dopingconcentration of Cr³⁺ and the radiant flux according to ExperimentalExample 1;

FIG. 15 is the photoluminescence emission spectrum (the excitation lighthas a wavelength of 450 nm) of the phosphor having different dopingconcentrations of Gd³⁺ according to Experimental Example 2;

FIG. 16 is a graph showing the relationship between the dopingconcentration of Gd³⁺ and the radiant flux according to ExperimentalExample 2;

FIG. 17 is the photoluminescence emission spectrum (excitation light hasa wavelength of 450 nm) of the phosphor having different dopingconcentrations of Sn⁴⁺ according to Experimental Example 3;

FIG. 18 is a graph showing the relationship between the dopingconcentration of Sn⁴⁺ and the radiant flux according to ExperimentalExample 3;

FIG. 19 is the photoluminescence emission spectrum (the excitation lighthas a wavelength of 450 nm) of the La₃Ga_(0.99)Ge₅O₁₆: 0.01Cr³⁺ andLa₃Ga_(4.95)Ge_(0.9)O₁₄: 0.05Cr³⁺ according to Comparative Example 1;

FIG. 20 is the X-ray diffraction spectrum of the phosphor according toExample 7;

FIG. 21 is the photoluminescence emission spectrum (the excitation lighthas a wavelength of 460 nm) of the phosphor according to Example 7;

FIG. 22 is the X-ray diffraction spectrum of the phosphorLa₃Ga_(4.95)Ge_(0.9)O₁₄: 0.05Cr³⁺, 0.1Sn⁴⁺ according to Example 8;

FIG. 23 is the X-ray diffraction spectrum of the phosphorLa₃Ga_(4.95)Ge_(0.7)O₁₄: 0.05Cr³⁺, 0.3Sn⁴⁺ according to Example 8;

FIG. 24 is the X-ray diffraction spectrum of the phosphorLa₃Ga_(4.95)Ge_(0.5)O₁₄: 0.05Cr³⁺, 0.5Sn⁴⁺ according to Example 8;

FIG. 25 is the photoluminescence emission spectrum (the excitation lighthas a wavelength of 460 nm) of the phosphor La₃Ga_(4.95)Ge_(0.9)O₁₄:0.05Cr³⁺, 0.1Sn⁴⁺ according to Example 8;

FIG. 26 is the photoluminescence emission spectrum (the excitation lighthas a wavelength of 460 nm) of the phosphor La₃Ga_(4.95)Ge_(0.7)O₁₄:0.05Cr³⁺, 0.3Sn⁴⁺ according to Example 8;

FIG. 27 is the photoluminescence emission spectrum (the excitation lighthas a wavelength of 460 nm) of the phosphor La₃Ga_(4.95)Ge_(0.5)O₁₄:0.05Cr³⁺, 0.5Sn⁴⁺ according to Example 8; and

FIG. 28 is a schematic structural diagram of the optoelectroniccomponent according to Example 9 of the present application.

DETAILED DESCRIPTION

In order to describe objectives, technical solutions and advantages ofexamples of the present application more clearly, the technicalsolutions in the examples of the present application will be describedhereunder clearly and completely with reference to the accompanyingdrawings in the examples of the present application. The describedexamples are only a part of examples, rather than all examples of thepresent application. All other examples obtained by those skilled in theart based on the embodiments of the present application without anycreative effort should fall within the scope of the present application.

The raw materials used in the following examples: La₂O₃, Ga₂O₃ and Cr₂O₃have a purity of 99.9% respectively, all of which are commerciallyavailable from Merck; GeO₂ has a purity of 99.9%, which is commerciallyavailable from Aldrich; Gd₂O₃, Yb₂O₃ and SnO₂ have a purity of 99.9%respectively, all of which are commercially available from SigmaAldrich.

The tubular and muffle furnace is commercially available from Eurotherm.The X-ray diffraction spectrum of the sample powders of the phosphor ismeasured by an X-ray diffractometer commercially available from BRUKERAXS with a model number of Desktop Bruker D2 PHASER A26-X1-A2B0B2A(Serial No. 205888). The photoluminescence emission spectrum of thesample powders of the phosphor is measured by Gemini 180 and iR320commercially available from Horiba (Jobin Yvon).

EXAMPLE 1

The present example provides a set of phosphors having a general formulaof La₃Ga_(1−y)Ge₅O₁₆: yCr³⁺, where 0<y

0.2, the chemical formulas of the set of phosphors are as follows:La₃Ga_(0.995)Ge₅O₁₆: 0.005Cr³⁺La₃Ga_(0.99)Ge₅O₁₆: 0.0 1Cr³⁺La₃Ga_(0.97)Ge₅O₁₆: 0.03Cr³⁺La₃Ga_(0.95)Ge₅O₁₆: 0.05Cr³⁺La₃Ga_(0.93)Ge₅O₁₆: 0.07Cr³⁺La₃Ga_(0.91)Ge₅O₁₆: 0.09Cr³⁺La₃Ga_(0.89)Ge₅O₁₆: 0.11Cr³⁺La₃Ga_(0.87)Ge₅O₁₆: 0.13Cr³⁺

The preparing method of the set of phosphors is as follows: according tostoichiometric ratios in the molecular formulae of the phosphors,accurately weighing the raw materials La₂O₃, Ga₂O₃, GeO₂ and Cr₂O₃;placing the weighed raw materials in an agate mortar to grind for evenlymixing; then transferring the resulting mixture to an alumina crucible;placing in a muffle furnace and sintering in an air atmosphere at atemperature of about 1250-1300° C. for about 5-6 hours; and aftercooling with the furnace, grinding into powders to obtain a targetphosphor.

FIG. 1 and FIG. 2 shows the X-ray diffraction spectrums ofLa₃Ga_(0.99)Ge₅O₁₆: 0.01Cr³⁺ and La₃Ga_(0.93)Ge₅O₁₆: 0.07Cr³⁺,respectively. X-ray diffraction spectrums of other phosphors in the setare similar to those in FIG. 1-FIG. 2. As shown in FIG. 1 and FIG. 2,the X-ray diffraction spectrum of the above two phosphors arerespectively compared with a standard X-ray diffraction spectrum. Allthe diffraction peaks of the two phosphors are consistent with astandard spectrum JCPDS 890211 (ICSD-50521) and no impurity peak isobserved, indicating that the incorporation of Cr³⁺ incurred no changesin the crystal structure, that is, the activator Cr³⁺ successfullyentered into the crystal lattice. Further, the crystals ofLa₃Ga_(0.99)Ge₅O₁₆: 0.01Cr³⁺ and La₃Ga_(0.93)Ge₅O₁₆: 0.07Cr³⁺ belong toa triclinic system, and a space group is P-1(2).

FIG. 3 and FIG. 4 shows the photoluminescence emission spectrums ofLa₃Ga_(0.99)Ge₅O₁₆: 0.01Cr³⁺ and La₃Ga_(0.93)Ge₅O₁₆: 0.07Cr³⁺,respectively. The photoluminescence emission spectrums of otherphosphors are similar to those in FIG. 3 and FIG. 4. As shown in FIG. 3and FIG. 4, when excited by excitation light of 460 nm or 450 nm, theemission spectrums of La₃Ga_(0.99)Ge₅O₁₆: 0.01Cr³⁺ andLa₃Ga_(0.93)Ge₅O₁₆: 0.07Cr³⁺ cover the spectral range of 600-1100 nm,especially a spectral range of 650-1050 nm.

Based on the above test and characterization results, considering theionic radius and valence state, it can be determined that, in the set ofphosphors, the incorporation of Cr³⁺ replaces the lattice position ofGa³⁺ in the matrix.

EXAMPLE 2

The present example provides a phosphor having a molecular formula ofLa_(2.97)Ga_(0.99)Ge₅O₁₆: 0.03Gd³⁺, 0.01Cr³⁺, the preparing method ofthe phosphor is as follows:

According to a stoichiometric ratio in the molecular formula of thephosphor, accurately weighing the raw materials La₂O₃, Ga₂O₃, GeO₂,Gd₂O₃ and Cr₂O₃, and placing the weighed raw materials into an agatemortar to grind for evenly mixing; then transferring the mixture to analumina crucible; placing in a muffle furnace and sintering in an airatmosphere; controlling the temperature at about 1250° C. to sinter forabout 6 hours; and after cooling in the furnace, grinding into powdersto obtain the phosphor.

As shown in FIG. 5, the X-ray diffraction spectrum of the phosphor iscompared with the standard X-ray diffraction spectrum. All thediffraction peaks of the phosphor are consistent with the standardspectrum JCPDS 890211 (ICSD-50521) and no impurity peak is detected,indicating that the activator Cr³⁺ and the sensitizer Gd³⁺ successfullyentered into the crystal lattice. Further, the crystal of the phosphorbelongs to the triclinic system, and the space group is P-1 (2).

As shown in FIG. 6, when excited by the excitation light of 460 nm, theemission spectrum of La_(2.97)G_(0.99)Ge₅O₁₆: 0.03Gd³⁺, 0.01Cr³⁺ coversa spectral range of 600-1100 nm, especially a spectral range of 650-1050nm.

Based on the above test and characterization results, considering theionic radius and valence state, it can be determined that, in thephosphor, the incorporation of Cr³⁺ replaces the lattice position ofGa³⁺ in the matrix; similarly, the co-doped Gd³⁺ replaces La³⁺ on theoriginal site of the matrix lattice.

EXAMPLE 3

The present example provides a phosphor having a molecular formula ofLa_(2.97)Ga_(0.99)Ge₅O₁₆: 0.03Yb³⁺, 0.01Cr³⁺, the preparing method ofthe phosphor is as follows:

According to a stoichiometric ratio in the molecular formula of thephosphor, accurately weighing the raw materials La₂O₃, Ga₂O₃, GeO₂,Yb₂O₃ and Cr₂O, and placing the weighed raw materials into an agatemortar to grind for evenly mixing; then transferring the mixture to analumina crucible; placing in a muffle furnace and sintering in an airatmosphere; controlling the temperature at about 1250° C. to sinter forabout 6 hours; and after cooling with the furnace, grinding into powdersto obtain the phosphor.

As shown in FIG. 7, the X-ray diffraction spectrum of the phosphor wascompared with a standard X-ray diffraction spectrum. All the diffractionpeaks of the phosphor are consistent with the standard spectrum JCPDS890211 (ICSD-50521) and no impurity peak is detected, indicating thatthe activator Cr³⁺ and the sensitizer Yb³⁺ successfully entered into thecrystal lattice. Further, the crystal of the phosphor belongs to thetriclinic system, and the space group is P-1 (2).

As shown in FIG. 8, when excited by the excitation light of 460 nm, theemission spectrum of the phosphor La_(2.97)Ga_(0.99)Ge₅O₁₆: 0.03Yb³⁺,0.01Cr³⁺ covers a spectral range of 600-1100 nm, especially a spectralrange of 650-1050 nm.

Based on the above test and characterization results, considering theionic radius and valence state, it can be determined that Cr³⁺ replacesGa³⁺ on the original site in the matrix lattice. Similarly, the co-dopedYb³⁺ replaces La³⁺ on the original site in the matrix lattice.

EXAMPLE 4

The present example provides a set of phosphors having a general formulaof La_(3(1−x))Ga_(1−y)Ge₅O₁₆: 3xA³⁺, yCr³⁺,where 0<3x+0.3, y=0.07, and Arepresents Gd, the chemical formulae of the set of phosphors are asfollows, and reference may be made to Example 2 for the correspondingpreparing method:La_(2.985)Ga_(0.93)Ge₅O₁₆: 0.015Gd³⁺, 0.07Cr³⁺La_(2.97)Ga_(0.93)Ge₅O₁₆: 0.03Gd³⁺, 0.07Cr³⁺La_(2.955)Ga_(0.93)Ge₅O₁₆: 0.045Gd³⁺, 0.07Cr³⁺La_(2.94)Ga_(0.93)Ge₅O₁₆: 0.06Gd³⁺, 0.07Cr³⁺La_(2.91)Ga_(0.93)Ge₅O₁₆: 0.09Gd³⁺, 0.07Cr³⁺La_(2.85)Ga_(0.93)Ge₅O₁₆: 0.15Gd³⁺, 0.07Cr³⁺La_(2.79)Ga_(0.93)Ge₅O₁₆: 0.21Gd³⁺, 0.07Cr³⁺

FIG. 9 is the X-ray diffraction spectrum of the phosphorLa_(2.97)Ga_(0.93)Ge₅O₁₆: 0.03Gd³⁺, 0.07Cr³⁺, and XRD diffractionspectrums of other phosphors are similar to those in FIG. 9. As shown inFIG. 9, the X-ray diffraction spectrums of the phosphors are comparedwith the standard X-ray diffraction spectrum. All the diffraction peaksof the phosphors are consistent with the standard spectrum JCPDS 890211(ICSD-50521), and no impurity peak is observed, indicating that theactivator Cr³⁺ and the Gd³⁺ successfully entered into the crystallattice. Further, the crystals of the set of phosphors belong to thetriclinic system, and the space group is P-1 (2).

FIG. 10 is the photoluminescence emission spectrum of the phosphorLa_(2.97)Ga_(0.93)Ge₅O₁₆: 0.03Gd³⁺, 0.07Cr³⁺. Photoluminescence emissionspectrums of other phosphors are similar to those in FIG. 10. As shownin FIG. 10, when excited by the excitation light of 450 nm, the emissionspectrum of the phosphor covers a range of 600-1100 nm, especially arange of 650-1050 nm.

Based on the above test and characterization results, considering theionic radius and valence state, it can be determined that theincorporation of Cr³⁺ replaces Ga³⁺ on the original site in the matrixlattice. Similarly, the incorporation of co-doped Gd³⁺ replaces La³⁺ onthe original site in the matrix lattice.

EXAMPLE 5

The present example provides a phosphor having a molecular formula ofLa_(2.97)Ga_(0.93)Ge_(4.95)O₁₆: 0.03Gd³⁺, 0.07Cr³⁺, 0.05Sn⁴⁺. Thepreparing method of the phosphor is as follows:

According to a stoichiometric ratio in the molecular formula of thephosphor, accurately weighing the raw materials La₂O₃, Ga₂O₃, GeO₂,Gd₂O₃, Cr₂O₃ and SnO₂, and placing the weighed raw materials into anagate mortar to grind for evenly mixing; then transferring the resultingmixture to an alumina crucible; placing in a muffle furnace andsintering in an air atmosphere; controlling the temperature at about1250° C. to sinter for about 5 hours; and after cooling with thefurnace, grinding into powders to obtain the phosphor.

As shown in FIG. 9, the X-ray diffraction spectrums of the phosphors arecompared with the standard X-ray diffraction spectrum. All thediffraction peaks of the phosphor are consistent with the standardspectrum JCPDS 890211 (ICSD-50521) and no impurity peak is observed,indicating that the activator Cr³⁺, the sensitizers Gd³⁺ and Sn⁴⁺successfully entered into the crystal lattice. Further, the crystal ofthe phosphor belongs to the triclinic system, and the space group is P-1(2).

As shown in FIG. 11, when excited by the excitation light of 450 nm, theemission spectrum of the phosphor covers a spectral range of 600-1100nm, especially a spectral range of 650-1050 nm.

Based on the above test and characterization results, considering theionic radius and valence state, it can be determined that theincorporation of Cr³⁺ replaces Ga³⁺ on the original site in the matrixlattice. Similarly, the incorporation of co-doped Gd³⁺ and Sn⁴⁺ replacesLa³⁺ and Ge⁴⁺ on the original sites in the matrix lattice, respectively.

EXAMPLE 6

This example provides an optoelectronic component. As shown in FIG. 12,the optoelectronic component 1 includes a housing 6 provided with arecess 8, a semiconductor chip 2 for emitting a primary radiation, and afirst lead 4 and a second lead 5 respectively connected to the a housing6. An inner side wall of the recess 8 is coated with a suitable materialto reflect the emitted light with the assistance of a reflector cup 7;the semiconductor chip 2 is mounted in the recess 8 and is respectivelyconnected to the first lead 4 and the second lead 5 which are opaque; aconversion unit 3 is mounted on an optical path of the primary radiationemitted from the semiconductor chip 2. The conversion unit 3 contains oris provided with the phosphor according to Examples 1-5 described above.Specifically, the phosphor is dispersed in the epoxy resin, and theconversion unit 3 is produced and dispersed outside the semiconductorchip 2 to absorb the primary radiation emitted from the semiconductorchip 2 and convert into a secondary radiation.

The basic parameters of the above optoelectronic component 1 are shownin Table 1; under these basic parameters, the measurement results of theradiant flux obtained when part of the phosphors in Examples 1-5 is usedfor the conversion unit 3 are shown in Table 2.

TABLE 1 LED Phosphor packaging Silicone content in the bracket LED chipspecifications encapsulant conversion unit PPA3535 Size: 40 mil * 40 mil1.4 Silicone 50 wt % Luminescence wavelength: 450-452.5 nm Power: 109.7mW

TABLE 2 Radiant flux Phosphor chemical Total Radiant flux (λ = formularadiant flux (λ = 372-650 nm) 650-1050 nm) La₃Ga_(0.99)Ge₅O₁₆: 344.2 mW326.8 mW 17.6 mW 0.01Cr³⁺ La_(2.97)Ga_(0.99)Ge₅O₁₆: 581.5 mW 558.8 mW25.7 mW 0.03Gd³⁺, 0.01Cr³⁺ La_(2.97)Ga_(0.99)Ge₅O₁₆: 295.1 mW 286.0 mW 9.1 mW 0.03Yb³⁺, 0.01Cr³⁺ La₃Ga_(0.93)Ge₅O₁₆: 366.2 mW 323.1 mW 43.1 mW0.07Cr³⁺ La_(2.97)Ga_(0.93)Ge₅O₁₆: 307.8 mW 251.5 mW 56.3 mW 0.07Cr³⁺,0.03Gd³⁺ La_(2.67)Ga_(0.93)Ge_(4.95)O₁₆: 284.0 mW 218.8 mW 65.2 mW0.07Cr³⁺, 0.03Gd³⁺, 0.05Sn⁴⁺

As can be seen from Table 2, the phosphor provided in the presentapplication has a radiant flux of 4-70 mW in the wavelength range of650-1050 nm and thus has a high radiant flux.

EXPERIMENTAL EXAMPLE 1

The present experimental example aims to investigate the effects ofdifferent doping concentrations of Cr³⁺ on the radiant flux. Taking thephosphor having the general formula of La₃Ga_(1−y)Ge₅O₁₆: yCr³⁺ (0<y

0.1)as an example, the basic parameters of the optoelectronic componentused for testing are shown in Table 1; the doping concentration of Cr³⁺and the corresponding radiant flux are shown in Table 3; thephotoluminescence emission spectrums of phosphors with different dopingconcentrations of Cr³⁺ are shown in FIG. 13; and a graph showing therelationship between the doping concentration of Cr³⁺ and the radiantflux (the wavelength range is 650-1050 nm) is shown in FIG. 14.

TABLE 3 Doping Radiant flux Phosphor chemical formula concentration -Cr³⁺ (λ = 650-1050 nm) La₃Ga_(0.995)Ge₅O₁₆: 0.005Cr³⁺ 0.5%    9.1 mWLa₃Ga_(0.99)Ge₅O₁₆: 0.01Cr³⁺ 1% 17.6 mW La₃Ga_(0.97)Ge₅O₁₆: 0.03Cr³⁺ 3%31.0 mW La₃Ga_(0.95)Ge₅O₁₆: 0.05Cr³⁺ 5% 34.1 mW La₃Ga_(0.93)Ge₅O₁₆:0.07Cr³⁺ 7% 43.1 mW La₃Ga_(0.91)Ge₅O₁₆: 0.09Cr³⁺ 9% 38.6 mWLa₃Ga_(0.89)Ge₅O₁₆: 0.11Cr³⁺ 11%  30.3 mW La₃Ga_(0.87)Ge₅O₁₆: 0.13Cr³⁺13%  28.6 mW

As can be seen from Table 3 and FIG. 13-FIG. 14, in the phosphorLa₃Ga_(1−y)Ge₅O₁₆: yCr³⁺ (0<y

0.1), when the doping concentration of Cr³⁺ is not less than 0.5%, theradiant flux is higher than 9.0 mW; when the doping concentration ofCr³⁺ is increased to 3.0%-11%, the radiant flux is higher than 30 mW.Moreover, as the doping concentration of Cr³⁺ increases, the radiantflux first increases to the peak value accordingly and then decreases.When the doping concentration of Cr³⁺ is about 7% (the correspondingphosphor is La₃Ga_(0.93)Ge₅O₁₆: 0.07Cr³⁺), the radiant flux reaches thehighest of 43.1 mW.

EXPERIMENTAL EXAMPLE 2

The present experimental example aims to investigate the effects ofdifferent doping concentrations of Gd³⁺ on the radiant flux Taking thephosphor having the general formula of La_(3(1−x))Ga_(1−y)Ge₅O₁₆:3xGd³⁺: yCr³⁺ (0<3x+0.3, y=0.07) as an example, the basic parameters ofthe optoelectronic component used for testing are shown in Table 1; thedoping concentration of Gd³⁺ and the corresponding radiant flux areshown in Table 4; the photoluminescence emission spectrums of thephosphors with different doping concentrations of Gd³⁺ are shown in FIG.15; and a graph showing the relationship between the dopingconcentration of Gd³⁺ and the radiant flux (the wavelength range is650-1050 nm) is shown in FIG. 16.

TABLE 4 Radiant flux Doping (λ = concentration - 650-1050 Phosphorchemical formula Gd³⁺ nm) La_(2.985)Ga_(0.93)Ge₅O₁₆: 0.015Gd³⁺: 0.07Cr³⁺0.5% 51.0 mW La_(2.97)Ga_(0.93)Ge₅O₁₆: 0.03Gd³⁺: 0.07Cr³⁺ 1.0% 56.3 mWLa_(2.955)Ga_(0.93)Ge₅O₁₆: 0.045Gd³⁺: 0.07Cr³⁺ 1.5% 55.6 mWLa_(2.94)Ga_(0.93)Ge₅O₁₆: 0.06Gd³⁺: 0.07Cr³⁺ 2.0% 44.7 mWLa_(2.91)Ga_(0.93)Ge₅O₁₆: 0.09Gd³⁺: 0.07Cr³⁺ 3.0% 42.2 mWLa_(2.85)Ga_(0.93)Ge₅O₁₆: 0.15Gd³⁺ 0.07Cr³⁺ 5.0% 32.7 mWLa_(2.94)Ga_(0.93)Ge₅O₁₆: 0.21Gd³⁺: 0.07Cr³⁺ 7.0% 25.6 mW

As can be seen from Table 4 and FIG. 15-FIG. 16, in the phosphorLa_(3(1−x))Ga_(1−y)Ge₅O₁₆: 3xGd³⁺: yCr³⁺, when the doping concentrationof Gd³⁺ is 0.5%-5%, the radiant flux is greater than 30 mW; when thedoping concentration of Gd³⁺ is 0.5%-1.5%, the radiant flux is evengreater than 50 mW. Moreover, as the doping concentration of Gd³⁺increases, the radiant flux first increases to the peak valueaccordingly and then decreases. When the doping concentration of Gd³⁺ isabout 1% (the corresponding phosphor is La_(2.97)Ga_(0.93)Ge₅O₁₆:0.03Gd³⁺: 0.07Cr³⁺), the radiant flux reaches the highest of 56.3 mW.

EXPERIMENTAL EXAMPLE 3

This experimental example aims to investigate the effects of differentdoping concentrations of Sn⁴⁺ on the radiant flux. Taking the phosphorhaving the general formula of La_(3(1−x))Ga_(1−y)Ge_(5(1−z))O₁₆: 3xGd³⁺,yCr³⁺, 5zSn⁴⁺ (3x=0.03, y=0.01, 0<5z

0.2) as an example, the basic parameters of the optoelectronic componentused for testing are shown in Table 1; the doping concentration ofSn⁴⁺and the corresponding radiant flux are shown in Table 5; thephotoluminescence emission spectrums of phosphors with different dopingconcentrations of Sn⁴⁺ are shown in FIG. 17; and a graph showing therelationship between the doping concentration of Sn⁴⁺ and the radiantflux (the wavelength range is 650-1050 nm) is shown in FIG. 18.

TABLE 5 Doping concen- Radiant flux tration - (λ = Phosphor chemicalformula Sn⁴⁺ 650-1050 nm) La_(2.97)Ga_(0.99)Ge_(4.975)O₁₆: 0.03Gd³⁺:0.01Cr³⁺: 0.5% 47.0 mW 0.025Sn⁴⁺ La_(2.97)Ga_(0.99)Ge_(4.95)O₁₆:0.03Gd³⁺: 0.01Cr³⁺: 1.0% 65.2 mW 0.05Sn⁴⁺La_(2.97)Ga_(0.99)Ge_(4.925)O₁₆: 0.03Gd³⁺: 0.01Cr³⁺: 1.5% 50.3 mW0.075Sn⁴⁺ La_(2.97)Ga_(0.99)Ge_(4.9)O₁₆: 0.03Gd³⁺: 0.01Cr³⁺: 2.0% 41.5mW 0.1Sn⁴⁺ La_(2.97)Ga_(0.99)Ge_(4.85)O₁₆: 0.03Gd³⁺: 0.01Cr³⁺: 3.0% 40.9mW 0.15Sn⁴⁺

As can be seen from Table 5 and FIG. 17-FIG. 18, in the phosphorLa_(3(1−x))Ga_(1−y)Ge_(5(1−z))O₁₆: 3xGd³⁺, yCr³⁺, 5zSn⁴⁺, when thedoping concentration of Sn⁴⁺is greater than or equal to 0.5%, theradiant flux is greater than 40 mW. Moreover, as the dopingconcentration of Sn⁴⁺ increases, the radiant flux first increases to thepeak value accordingly and then decreases. When the doping concentrationof Sn⁴⁺ is about 1% (the corresponding phosphor isLa_(2.97)Ga_(0.99)Ge_(4.95)O₁₆: 0.03Gd³⁺: 0.01Cr³⁺: 0.05Sn⁴⁺), theradiant flux reaches the highest of 65.2 mW.

COMPARATIVE EXAMPLE 1

The present comparative example provides a phosphor having a chemicalformula of La₃Ga_(4.95)GeO₁₄: 0.05Cr³⁺ (the doping concentration of Cr³⁺is 1%), a comparison between the radiant flux of the phosphor and thatof La₃Ga_(0.99)Ge₅O₁₆: 0.01Cr³⁺ is shown in Table 6; FIG. 19 is thephotoluminescence emission spectrum of the above two phosphors. As shownin Table 6 and with reference to FIG. 19, in both the visible range of372-650 nm and the red visible and near-infrared range of 650-1050 nm,the radiant flux of La₃Ga_(4.95)GeO₁₄: 0.05Cr³⁺ is significantly smallerthan the radiant flux of La₃Ga_(0.99)Ge₅O₁₆: 0.01Cr³⁺, indicating thatthe phosphor provided in the present application is far superior to theconventional phosphors.

TABLE 6 Phosphor Total Radiant flux Radiant flux chemical formularadiant flux (λ = 372-650 nm) (λ = 650-1050 nm) La₃Ga_(4.95)GeO₁₄: 195.6mW 184.5 mW 10.1 mW 0.05Cr³⁺ La₃Ga_(0.99)Ge₅O₁₆: 344.2 mW 326.8 mW 17.6mW 0.01Cr³⁺

EXAMPLE 7

The present example provides a set of phosphors having the generalformula of La₃Ga_(5(1−x))Ge_(1−y)O₁₄: 5xCr³⁺, ySn⁴⁺, where 0<x<0.1, y=0.The chemical formulae of the set of phosphors are as follows:

La₃Ga_(4.95)GeO₁₄: 0.05Cr³⁺

La₃Ga_(4.75)GeO₁₄: 0.25Cr³⁺

La₃Ga_(4.55)GeO₁₄: 0.45Cr³⁺

The preparing method of the set of phosphor is as follows: according tostoichiometric ratios in the molecular formulae of the set of phosphors,accurately weighing the raw materials La₂O₃, Ga₂O₃, GeO₂ and Cr₂O₃;placing the weighed raw materials in an agate mortar to grind for evenlymixing; then transferring the resulting mixture to an alumina crucible;placing in a tubular furnace and sintering in an air atmosphere;controlling the temperature at about 1300° C. to sinter for about 5hours; and after cooling in the furnace, grinding into powders to obtainthe phosphor.

As shown in FIG. 20, the XRD diffraction spectrums of the set ofphosphors are compared with the standard spectrum JCPDS 722464(ICSD-20783). The diffraction peaks of the set of phosphors areconsistent with the standard spectrum and no impurity peak is detected,indicating that the activator Cr³⁺ and the sensitizer Sn⁴⁺ successfullyentered into the crystal lattice. The crystals of the set of phosphorsbelong to the triclinic system, and the space group is P-1(2).

As shown in FIG. 21, when excited by the excitation light of 460 nm, theemission spectrum of the set of phosphors cover a range of 600-1250 nm,especially a range of 650-1050 nm.

EXAMPLE 8

The present example provides a set of phosphors having the generalformula of La₃Ga_(5(1−x))Ge_(1−y)O₁₄: 5xCr³⁺, ySn⁴⁺, where x=0.01, 0<y

0.9. The chemical formulae of the set of phosphors are as follows:

La₃Ga_(4.95)Ge_(0.9)O₁₄: 0.05Cr³⁺, 0.1Sn⁴⁺;

La₃Ga_(4.95)Ge_(0.7)O₁₄: 0.05Cr³⁺, 0.3Sn⁴⁺;

La₃Ga_(4.95)Ge_(0.5)O₁₄: 0.05Cr³⁺, 0.5Sn⁴⁺.

The preparing method of the set of phosphors is as follows: according tostoichiometric ratios in the molecular formulae of the set of phosphors,accurately weighing the raw materials La₂O₃, Ga₂O₃, GeO₂, SnO₂ andCr₂O₃; and placing the weighed raw materials in an agate mortar to grindfor evenly mixing; then transferring the resulting mixture to an aluminacrucible; placing in a muffle furnace and sintering in an airatmosphere; controlling the temperature at about 1250° C. to sinter forabout 5 hours; and after cooling in the furnace, grinding into powdersto obtain the phosphor.

As shown in FIG. 11-FIG. 24, the X-ray diffraction spectrums of the setof phosphors are compared with the standard X-ray diffraction spectrum.All the diffraction peaks of the set of phosphors are consistent withthe standard spectrum JCPDS 722464 (ICSD-20783) and no impurity peak isdetected, indicating that the activator Cr³⁺ and the sensitizer Sn⁴⁺successfully entered into the crystal lattice. Further, the crystals ofthe set of phosphors belong to the triclinic system, and the space groupis P-1(2).

As shown in FIG. 25-FIG. 27, when excited by the excitation light of 460nm, the emission spectrums of the set of phosphors cover a range of600-1100 nm, especially a range of 650-1050 nm.

EXAMPLE 9

The present example provides an optoelectronic component. As shown inFIG. 28, the optoelectronic component includes a housing 11 providedwith a recess 16, a semiconductor chip 12 for emitting a primaryradiation, and a first lead 14 and a second lead 15 respectivelyconnected to the housing 11. An inner side wall of the recess 16 iscoated with a suitable material to achieve a selective reflection oflight; the semiconductor chip 12 is mounted in the recess 16 and isrespectively connected to the first lead 14 and the second lead 15 whichare opaque. a conversion unit 13 is mounted on an optical path of theprimary radiation emitted from the semiconductor chip 12. The conversionunit 13 contains or is provided with the phosphor according to Example 7described above. Specifically, the phosphor is dispersed in the epoxyresin, and the conversion unit 13 is produced and dispersed outside thesemiconductor chip 12 to absorb the primary radiation emitted from thesemiconductor chip 12 and converted into a secondary radiation.

The basic parameters of the above optoelectronic component are shown inTable 7; under these basic parameters, the measurement results of theradiant flux obtained when part of the phosphors provided in Example 7is used for the conversion unit 13 are shown in Table 8. The measurementresults of the radiant flux obtained when part of the phosphors providedin Example 8 is used for the conversion unit 13 are shown in Table 9.

TABLE 7 LED Phosphor packaging Silicone content in the bracket LED chipspecifications encapsulant conversion unit PPA3535 Size: 40 mil * 40 mil1.4 Silicone 50 wt % Luminescence wavelength: 450-452.5 nm Power: 109.7mW

TABLE 8 Doping concentration - Radiant flux Phosphor chemical formulaCr³⁺ (λ = 650-1050 nm) La₃Ga_(4.95)GeO₁₄: 0.05Cr³⁺ 1% 10.5 mW La₃Ga_(4.75)GeO₁₄: 0.25Cr³⁺ 5% 7.8 mW La₃Ga_(4.55)GeO₁₄: 0.45Cr³⁺ 9% 4.7mW

As shown in Table 8, as the doping concentration of Cr³⁺ is graduallyincreased, the radiant flux is correspondingly decreased, but when thedoping concentration of Cr³⁺ is 9%, the radiant flux corresponding tothe phosphor is still greater than 4 mW.

TABLE 9 Total Phosphor chemical radiant Radiant flux Radiant fluxformula flux (λ = 372-650 nm) (λ = 650-1050 nm) La₃Ga_(4.95)Ge_(0.9)O₁₄:150.6 mW 135.8 mW 14.8 mW 0.05Cr³⁺, 0.1Sn⁴⁺ La₃Ga_(4.95)Ge_(0.7)O₁₄:125.3 mW 111.5 mW 13.8 mW 0.05Cr³⁺, 0.3Sn⁴⁺ La₃Ga_(4.95)Ge_(0.5)O₁₄:157.9 mW 143.6 mW 14.3 mW 0.05Cr³⁺, 0.5Sn⁴⁺

Finally, it should be noted that the above examples are only used toillustrate the technical solutions of the present application, ratherthan limiting the present application; a person skilled in the art maystill modify the technical solutions described in the foregoingexamples, or make equivalent replacements to some or all of thetechnical features therein. However, these modifications or replacementsdo not make the essence of corresponding technical solutions depart fromthe scope of the technical solutions in the examples of the presentapplication, but should fall into the scope of the claims andspecification of the present application.

What is claimed is:
 1. A phosphor comprising the following general formula: La_(3(1−x))Ga_(1−y)Ge_(5(1−z))O₁₆: 3xA³⁺, yCr³⁺, 5zB⁴⁺, wherein x<1,0<y<1, z<1, and x and z do not equal to 0 simultaneously; A represents at least one of Gd and Yb; and B represents at least one of Sn, Nb, and Ta.
 2. The phosphor according to claim 1, wherein 0<3x

0.3, 0<y

0.2, 0

5z

0.2.
 3. The phosphor according to claim 1, wherein 0

3x

0.3, 0<y

0.2, 0<5z

0.2.
 4. The phosphor according to claim 1, further comprising the following general formula: La_(3(1−x))Ga_(1−y)Ge₅O₁₆: 3xA³⁺, yCr³⁺, wherein 0<3x

0.3, 0<y

0.2.
 5. The phosphor according to claim 1, further emitting light in a range of 600-1500 nm when excited by the excitation light having a wavelength of 400-500 nm.
 6. The phosphor according to claim 5, further emitting the light comprising a radiant flux 4-70 mW.
 7. The phosphor according to claim 1, being prepared by a method comprising steps of: Weighing starting precursors selected from oxide or carbonate containing materials and mixing raw materials for providing elements in the general formula according to the general formula of the phosphor, then sintering at a temperature of 1200-1500° C. for about 5-6 hours to obtain the phosphor.
 8. The phosphor according to claim 1, being prepared by a method comprising steps of: Preparing and mixing raw materials for providing elements in the general formula according to the general formula of the phosphor, then sintering at a temperature of 1200-1500° C. to obtain the phosphor.
 9. An optoelectronic component, comprising: a semiconductor chip for emitting excitation light during operation of the optoelectronic component; and a conversion unit provided with the phosphor according to claim 1 for converting the excitation light into emitted light.
 10. The optoelectronic component according to claim 9, wherein the excitation light has a wavelength of 450 nm or 460 nm, and the emitted light has a wavelength of 650-1050 nm.
 11. The optoelectronic component according to claim 9, wherein the semiconductor chip is a blue LED chip.
 12. A method for producing an optoelectronic component, comprising steps of: producing a conversion unit on which the phosphor according to claim 1 is provided; and mounting the conversion unit on a semiconductor chip, wherein the semiconductor chip is used to generate excitation light during operation of the optoelectronic component. 